Used TEL Certas LEAGA™ Plasma-Free Gas Chemical Etching System

The TEL Certas LEAGA™ is a plasma-free, gas-phase chemical etching system for 300mm wafers. Part of the TEL Certas series, it is specifically designed for the precise, isotropic processing of 3D-structured devices.

Core Positioning: All-Dry, Plasma-Free Processing

Unlike conventional plasma etching, the Certas LEAGA utilizes a purely gas-phase chemical approach for surface etching and cleaning. It eliminates the use of liquids and does not rely on plasma, fundamentally preventing issues such as watermarks, plasma-induced bombardment damage, and the collapse of delicate micro-patterns. This makes it exceptionally well-suited for processing fragile 3D structures, such as those found in 3D NAND and 3D DRAM.

Key Technical Features

Unique Oxide Selectivity Control: Offers flexible, tunable selectivity—ranging from non-selective to highly selective—for various types of SiO₂ films, meeting the specific etching requirements of diverse layer structures.

High-Throughput Modular Architecture: A single platform can be configured with up to six dual-wafer processing chambers, each capable of processing two wafers simultaneously, balancing operational flexibility with high-volume manufacturing throughput.

Precise Interface Cleaning and Etch-Back: Supports surface pre-cleaning (prior to silicon contact formation), oxide film removal and etch-back, selective etching of high-aspect-ratio 3D structures, and fine recessing processes. It is widely adopted by semiconductor manufacturers globally for both high-volume production and next-generation device development.

Summary

By employing an "all-dry, plasma-free" technical approach, the Certas LEAGA provides a high-selectivity, low-damage solution for the isotropic etching of 3D devices. It serves as a critical tool for interface cleaning and precision etching in the manufacturing of advanced memory and logic devices.