ETN Ion Implanter NV10-160 for sale

The ETN NV10-160 is a high-energy ion implanter designed for 200mm (8-inch) and smaller wafers. It belongs to the NV series of high-energy platforms from Axcelis (formerly the semiconductor division of Eaton/ETN).

Core Application: Specialized for Deep Implantation and High-Energy Doping

This system is engineered for doping processes that require high energy and deep penetration. It is primarily used to form deep buried layers, retrograde wells, deep isolation structures, and deep junctions in power devices. With an energy range extending to 160 keV and beyond, it plays a critical role in 200mm mature-node manufacturing, power semiconductor production, and image sensor fabrication.

Key Technical Features

Stable High-Energy Beam Transport: Utilizing proven radio-frequency (RF) or electrostatic acceleration architectures—combined with high-precision mass-analysis magnets—the system ensures high energy purity and beam stability, enabling precise control over implantation depth.

Excellent Uniformity Across Large Areas: Equipped with a sophisticated mechanical scanning system and parallel beam control, the tool guarantees superior intra-wafer dose uniformity, meeting stringent requirements for deep-junction doping consistency.

Mature Automation Platform: Featuring a fully automated wafer-handling system and SECS/GEM communication, the tool integrates seamlessly into high-volume production lines. As a classic platform from the ETN/Axcelis lineage, it benefits from well-established process recipes and manageable costs for spare parts and maintenance.

Summary

With its stable high-energy implantation capabilities, precise energy control, and mature production-ready platform, the NV10-160 serves as a core piece of equipment for high-energy doping processes—such as the creation of deep buried layers and retrograde wells—in 200mm manufacturing environments.