SEN Ion Implanter 10GSD-A-160 for sale

The SEN 10GSD-A-160 is a medium-to-high energy ion implanter designed for 150mm/200mm (6/8-inch) wafers. It belongs to the classic GSD series platform originally developed by SEN (Sumitomo Eaton Nova, later acquired by Axcelis).

Core Positioning: A versatile platform bridging medium-energy and high-current ion implantation.

The "160" in the model name typically indicates a base acceleration energy capability of up to approximately 160 keV (with even higher energies achievable through the use of multiple charge states). The system is specifically engineered for mature process nodes, power semiconductors, and specialty technologies, finding extensive application in processes such as source/drain doping, retrograde well formation, and the creation of deep buried layers.

Key Technical Features

Broad Process Coverage: Leveraging the GSD platform’s robust beam-transport architecture, the system offers flexible switching between low-energy high-current implantation and medium-to-high energy implantation, meeting the diverse doping requirements of various device structures.

High Purity and Precise Control: Equipped with a high-precision mass-analysis magnet and a parallel-scan system, the tool effectively filters out energy contamination, ensuring precise control over implantation depth and excellent dose uniformity across the wafer.

Proven, Reliable Productivity: The system comes standard with a fully automated wafer-handling system and supports SECS/GEM communication, allowing for seamless integration into automated production lines. As a classic platform with a large installed base, it benefits from highly mature process recipes and relatively low costs for spare parts and maintenance.

Summary

With its flexible medium-to-high energy implantation capabilities, precise beam control, and mature, production-proven architecture, the 10GSD-A-160 serves as a vital ion implantation tool for well doping and deep-junction formation in 6/8-inch wafer manufacturing lines.