SEN 10GSD-A-80 High-Energy/Medium-Current Ion Implanter

The SEN 10GSD-A-80 is a high-energy/medium-current ion implanter designed for 150mm/200mm (6/8-inch) wafers. It belongs to the classic GSD platform developed by SEN (Sumitomo Eaton Nova—a product line later integrated into Axcelis).

Core Positioning: A Versatile High-Energy/High-Current Implantation Platform

The model name clearly reflects its primary capabilities: "GSD" refers to the "Gaseous Source Diffusion" series architecture, while "80" typically denotes its base energy range or specific acceleration configuration. It is primarily used for deep-junction doping and well-formation in power semiconductors, logic chips, and specialty process technologies, offering high versatility for established wafer fabs.

Key Technical Features

Wide Energy and Dose Range: Leveraging the mature beam-transport design of the GSD platform, the system provides high-energy implantation capabilities—ranging from the keV to the MeV level—while simultaneously supporting high-current, high-dose doping, enabling multi-functional utility in a single tool.

Stable Beam Control: Equipped with a high-precision mass-analysis magnet and a parallel-scan system, the tool ensures energy purity and excellent within-wafer dose uniformity, meeting the stringent process requirements for high-voltage devices and deep buried layers.

Proven High-Volume Manufacturing (HVM) Architecture: The system comes standard with fully automated wafer handling and SECS/GEM communication. As a classic platform with a large installed base across the industry, it benefits from an extensive library of established process recipes, with manageable maintenance and spare-parts costs.

Summary

With its broad energy range, stable beam control, and mature, production-proven architecture, the 10GSD-A-80 serves as a core ion-implantation tool for 6/8-inch production lines—specifically for deep-junction implantation, retrograde-doped wells, and power-device doping applications.