Used AXCELIS Ion Implanter GSD200

The Axcelis GSD200 is a high-energy/high-current ion implanter designed for 200mm (8-inch) wafers, belonging to the classic GSD (Gaseous Source Diffusion) platform series from Axcelis.

Core Positioning: A Versatile Implantation Platform for Mature Process Nodes

The GSD200 is renowned for its flexible beam-transport architecture, capable of covering a broad process spectrum—from high-current (high-dose) to high-energy (deep-implantation) applications. It primarily serves the manufacturing of logic chips, analog devices, power semiconductors, and CMOS image sensors (CIS) on 200mm production lines, addressing various process requirements such as source/drain doping, well implantation, and the formation of deep buried layers.

Key Technical Features

Wide Energy and Dose Range: The system spans from low-energy (keV range) to high-energy (MeV range) levels, with flexible dose control ranging from low to high (1E13 – 1E16 ions/cm²), offering multi-functional utility in a single tool.

High Uniformity and Low Metal Contamination: Equipped with an optimized beam-scanning and parallelization system, the GSD200 ensures excellent intra-wafer dose uniformity for 200mm wafers. It is specifically engineered for stringent metal-contamination control, meeting the low-defect requirements of advanced devices.

Proven Platform with High Productivity: The GSD platform boasts a large installed base across the industry, supported by a mature library of process recipes. Combined with a fully automated wafer-handling system and high beam-utilization efficiency, it delivers exceptional throughput for mass production.

Summary

With its broad process coverage, superior dose uniformity, and a mature platform ecosystem, the Axcelis GSD200 stands out as a highly flexible and cost-effective ion-implantation solution for 200mm mature-node and specialty-process production lines.