Used ETN Ion Implanter NV6200

The ETN NV6200 is a high-energy ion implanter designed for 200mm (8-inch) and smaller wafers. It belongs to the classic NV series platform originally developed by Eaton (which later spun off its semiconductor equipment division as Axcelis).

Core Application: Specialized for High-Energy, Deep-Junction Implantation

This system is engineered for doping processes that require high energy and deep penetration. It is primarily used to create deep buried layers, retrograde wells, deep junctions for high-voltage devices, and deep photodiode structures for image sensors. It serves as a critical tool for high-energy doping in 200mm mature-node manufacturing, power semiconductor production, and specialty process lines.

Key Technical Features

Robust High-Energy Acceleration Architecture: Utilizing proven radio-frequency (RF) linear accelerator technology, the system can accelerate ions to high energy levels—typically ranging from hundreds of keV to the MeV range—enabling precise ion implantation at depths of several micrometers.

High-Purity Beam and Precise Control: Equipped with a high-precision mass-analysis magnet and an energy-filtering system, the tool effectively eliminates energy contamination and unwanted ion species, ensuring that the implantation depth is both precise and controllable.

High Throughput and Mature Automation: The system features a fully automated wafer-handling system and a mechanical scanning mechanism, which ensure uniform dose distribution across the wafer. It supports SECS/GEM communication, allowing for seamless integration into automated high-volume production lines. As a long-established platform, it offers a mature process, with manageable costs for spare parts and maintenance.

Summary

With its stable high-energy acceleration capabilities, precise energy control, and proven track record in high-volume manufacturing, the NV6200 stands as a core high-energy ion implantation tool for 200mm production lines, specifically for deep-implantation processes such as the formation of deep buried layers and retrograde wells.