Used ECO 1000 FT-IR Infrared Spectroscopy Measurement System

The ECO 1000 FT-IR is a fully automated Fourier-Transform Infrared (FT-IR) spectroscopy system designed specifically for semiconductor wafers (notably 200mm and 300mm). It is primarily used for measuring thin-film thickness and analyzing chemical composition in front-end-of-line (FEOL) processes and advanced packaging.

Core Focus: Non-Contact Thin-Film Metrology

By leveraging the interaction—specifically interference and absorption—between infrared light and the thin films on a wafer surface, the system performs non-destructive measurements of thickness and doping concentrations for epitaxial layers, dielectric films, photoresists, and SOI (Silicon-on-Insulator) structures. It is particularly well-suited for high-precision monitoring of film thickness uniformity on materials such as silicon and silicon carbide (SiC).

Key Technical Features

Broad Spectral Range and High-Precision Resolution: Covering a wide infrared spectrum, the system can accurately resolve the thickness of multi-layer film structures and ultra-thin epitaxial layers (e.g., SiC epitaxy), meeting the rigorous process requirements of compound semiconductors.

Fully Automated, High-Throughput Operation: Equipped with an automated wafer-handling system (compatible with FOUPs or open cassettes), the unit supports fully automated, multi-site measurements and the generation of wafer thickness maps. It also supports SECS/GEM communication protocols.

Non-Destructive and Cleanroom-Compatible: Utilizing optical, non-contact measurement techniques, the system eliminates the risk of scratches or particle contamination associated with physical probes, ensuring full compliance with the stringent cleanliness standards of semiconductor fabrication facilities (fabs).

Summary

With its high-precision, non-contact infrared measurement capabilities and fully automated, high-throughput design, the ECO 1000 FT-IR serves as a critical metrology tool for monitoring film thickness and ensuring yield in processes such as epitaxial growth, thin-film deposition, and the production of compound semiconductors (e.g., SiC).