VARIAN Ion Implanter 200SJ for sale

The Varian 200SJ is a high-current ion implanter designed for 200mm (8-inch) wafers. Introduced by Varian Semiconductor—which was acquired by Applied Materials in 2011—it serves as a predecessor to the classic VIISta series platform.

Core Positioning: A Workhorse for High-Current, High-Dose Doping

This system is engineered for high-dose, high-throughput implantation processes, primarily utilized for source/drain doping, polysilicon doping, and the formation of contact regions. It functions as a key production tool for high-current doping in 200mm mature-node manufacturing, power semiconductor production, and logic chip fabrication.

Key Technical Features

High Beam Current and High Productivity: Featuring an optimized ion source and beam transport architecture, the system delivers high-dose ion beams. Combined with a high-speed mechanical scanning system, it achieves exceptional wafer throughput, meeting the rigorous capacity requirements of high-volume production lines.

Precise Beam Parallelism and Uniformity: Equipped with advanced beam parallelization technology, the system ensures that ions are implanted into the wafer surface at a consistent, fixed angle. This guarantees excellent intra-wafer dose uniformity and consistent doping within high-aspect-ratio structures across 200mm wafers.

Automation and Mature Process Ecosystem: The system comes standard with a fully automated wafer-handling system and supports SECS/GEM communication, allowing for seamless integration into automated production lines. As a significant legacy platform within Applied Materials’ (AMAT) ion implantation portfolio, it benefits from highly mature process recipes and a well-established infrastructure for spare parts and maintenance.

Summary

With its high-current, high-throughput capabilities, precise control over beam uniformity, and status as a mature production platform, the Varian 200SJ serves as a core ion implantation tool for high-dose source/drain and polysilicon doping in 200mm manufacturing environments.