SEN NV-GSD III 90 6/8-inch wafer ion implanter

The SEN NV-GSD III 90 is a medium-current/high-energy ion implanter designed for 150mm/200mm (6/8-inch) wafers. It belongs to the classic NV-GSD series platform developed by SEN (Sumitomo Eaton Nova, later integrated into Axcelis).

Core Positioning: A Mature and Flexible Doping Platform

As an evolution of the GSD series (GSD III), the "90" designation typically refers to its energy configuration—featuring a 90 keV base acceleration, which can be extended to higher energy levels through the use of multiple charge states. The system is specifically engineered for mature process nodes, power semiconductors, and analog chips, supporting a diverse range of applications such as source/drain doping, retrograde well formation, and deep buried layer implantation.

Key Technical Features

Broad Process Coverage: Leveraging the GSD platform’s proven beam transport and parallel scanning architecture, the system offers flexible switching between low-energy high-current implantation and medium-to-high-energy implantation. This "multi-purpose" capability enhances equipment utilization.

Stable Beam and High Purity: Equipped with a high-precision mass-analysis magnet, the system effectively filters out energy contamination and cross-contamination. This ensures high energy purity and excellent intra-wafer dose uniformity, meeting the stringent requirements for deep-junction and well-region doping.

Proven High-Volume Manufacturing (HVM) Architecture: The system comes standard with fully automated wafer handling and SECS/GEM communication protocols. With a large installed base across the industry, an extensive library of process recipes, and manageable costs for spare parts and maintenance, the platform allows for rapid integration into high-volume production environments.

Summary

With its broad energy range, stable beam control, and mature production-ready architecture, the NV-GSD III 90 serves as a core ion implantation tool for 6/8-inch wafer production lines—particularly for well-region doping, deep-junction implantation, and the manufacturing of power devices.