Used SEN Ion Implanter NV-GSD III 180

The SEN NV-GSD III 180 is a high-energy ion implanter designed for 150mm/200mm (6/8-inch) wafers. It belongs to the classic NV-GSD series platform from SEN (Sumitomo Eaton Nova, later acquired by Axcelis).

Core Positioning: A primary tool for high-energy deep-junction and well-region doping.

The "180" in the model name refers to its base acceleration energy configuration (180 keV). By utilizing multi-charged ions (such as P²⁺ or As²⁺), the effective implantation energy can be extended to the hundreds of keV or even MeV range. The system is specifically engineered for mature process nodes, power semiconductors, analog chips, and image sensors, and is widely used for forming retrograde wells, deep buried layers, and deep junctions in high-voltage devices.

Key Technical Features

High-Energy Acceleration and Precise Control: Leveraging the GSD platform’s proven RF acceleration and high-precision mass-analysis magnet, the system accurately selects ions of specific energies and charge states. This ensures precise implantation depth and high energy purity, while effectively filtering out unwanted contaminant ions.

Excellent Uniformity and Throughput: Equipped with sophisticated mechanical scanning and parallel beam control, the system guarantees superior intra-wafer dose uniformity for 6/8-inch wafers. Combined with a fully automated wafer-handling system, it meets the high-throughput requirements of volume production lines.

Mature Production Ecosystem: The system comes standard with SECS/GEM communication capabilities. As a classic platform with a large installed base, it offers an extensive library of process recipes, manageable maintenance costs, and readily available spare parts, facilitating rapid integration into production lines.

Summary

With its reliable high-energy implantation capabilities, precise beam control, and a mature platform ecosystem, the NV-GSD III 180 serves as a core production tool for 6/8-inch wafer fabrication—specifically for creating deep buried layers, retrograde wells, and doping profiles for power devices.