Used VARIAN Ion Implanter E220

The Varian E220 is a high-energy ion implanter designed for 200mm (8-inch) wafers. Originally introduced by Varian Semiconductor—which was acquired by Applied Materials (AMAT) in 2011—it belongs to the company’s classic E-series platform.

Core Positioning: A Dedicated Platform for High-Energy, Deep-Implant Processes

This system is engineered for doping processes that require high energy and deep penetration. It is primarily used to create deep buried layers, retrograde wells, deep isolation structures, and deep junctions for high-voltage devices. In production lines for 200mm mature-node technologies, power semiconductors, and CMOS image sensors (CIS), the E220 serves as a critical tool for high-energy doping.

Key Technical Features

RF Linear Acceleration: Utilizing an RF linear accelerator architecture, the system accelerates ions to high energy levels (in the MeV range), enabling precise ion implantation at depths of several microns—meeting the requirements for deep buried layers and deep wells.

Precise Energy Filtering and Beam Control: Equipped with a high-precision mass-analysis magnet and an energy-filtering system, the tool effectively eliminates energy contamination and unwanted ion species, ensuring precise control over implantation depth and excellent dose uniformity across the wafer.

Proven High-Volume Manufacturing (HVM) Architecture: Featuring a fully automated wafer-handling system and SECS/GEM communication, the E220 integrates seamlessly into automated production lines. As a classic high-energy platform from Varian, it benefits from mature process recipes and a well-established ecosystem for spare parts and maintenance.

Summary

With its stable high-energy acceleration capabilities, precise energy control, and proven track record in high-volume manufacturing, the Varian E220 stands as a core ion-implantation tool for 200mm production lines, specifically for high-energy doping applications such as the formation of deep buried layers and retrograde wells.