Used ASM Thin Flim Deposition Equipment XP4 EmerALD®

The ASM XP4 EmerALD® is a fully automated plasma-enhanced atomic layer deposition (PEALD) system for 300mm (12-inch) wafers, serving as a core platform within ASM’s portfolio for advanced thin-film deposition.

Core Positioning: Atomic-Level Thin-Film Deposition for Advanced Nodes

This system is specifically designed for thin-film deposition on structures with extremely high aspect ratios, a requirement in the manufacturing of advanced logic and memory chips. It is primarily used to deposit ultra-thin, highly conformal dielectric films (such as SiO₂ and SiN), playing a critical role in 3D NAND, DRAM, and advanced logic processes—particularly for spacer formation and patterning applications.

Key Technical Features

Multi-Chamber Cluster Architecture: Equipped with multiple independent PEALD reaction chambers, the system enables efficient wafer transfer under vacuum, balancing high throughput with low particle contamination.

Superior Conformality and Uniformity: Leveraging self-limiting surface reactions, PEALD technology achieves perfect step coverage—even within deep 3D structures—while maintaining atomic-level precision in film thickness control.

In-Situ Plasma and Chamber Cleaning: The system features an advanced RF plasma unit that supports a wide range of process gases. An integrated in-situ cleaning function effectively extends the interval between preventive maintenance (PM) cycles, thereby increasing tool uptime.

Summary

With its atomic-level thickness control, exceptional conformality on 3D structures, and high-throughput cluster architecture, the XP4 EmerALD® stands as a premier PEALD solution for ensuring high-quality thin-film deposition on the intricate, micro-scale structures found in advanced 300mm semiconductor manufacturing processes.