TEL EVAROS™ for sale
Product Detail
TEL EVAROS™ is a single-wafer thermal atomic layer deposition (ALD) platform from Tokyo Electron (TEL) designed for 300mm advanced logic and memory chip manufacturing. Positioned as a high-volume production tool for high-k metal gate (HKMG) stacks and advanced dielectric thin films, it competes directly with the ASM Pulsar series.
Process Focus: EVAROS specializes in the deposition of ultra-thin films at the atomic layer scale. Typical applications include high-k gate dielectrics (such as hafnium oxide-based films), interfacial layers, and various conformal dielectric films required for advanced technology nodes. Its single-wafer architecture enables precise thickness control and excellent within-wafer uniformity, meeting the stringent equivalent oxide thickness (EOT) requirements for advanced logic devices.
Platform Design: Built on TEL’s 300mm cluster platform, the system allows for the integration of multiple process modules to achieve high throughput. The reaction chamber features a low-volume design, complemented by precise temperature control and precursor delivery systems; this reduces cycle times while ensuring high film purity and wafer-to-wafer repeatability. By utilizing a thermal ALD approach, the system avoids plasma-induced damage, making it well-suited for gate stack processes that are highly sensitive to interface quality.
Applications: EVAROS is primarily used for the high-k metal gate modules in advanced logic chips, with additional applications in the deposition of conformal dielectric layers for memory devices. It complements TEL’s batch-type Episode series—while EVAROS focuses on high-precision, single-wafer deposition for advanced nodes, the Episode series is geared toward high-volume production for mature process nodes and power devices.
In short, EVAROS is TEL’s primary high-volume production platform for thermal ALD at advanced nodes, serving as a direct competitor to the ASM Pulsar and XP8 Synergis systems you previously inquired about.











