
The ASM XP4 Pulsar® is a 300mm atomic layer deposition (ALD) system based on the XP4 cluster platform, designed specifically for high-k metal gate processes in advanced logic chips. It employs a low-volume isothermal cross-flow reaction chamber, coupled with a unique solid-state precursor delivery system, enabling precise deposition of high-k dielectric layers such as hafnium oxide and hafnium silicate, exhibiting excellent film uniformity and purity. Its state-of-the-art AXIS reaction chamber further enhances defect control and inter-wafer repeatability, and extends cleaning cycle life. The XP4 platform can integrate up to four Pulsar modules, ensuring process independence while maintaining mass production efficiency, making it a key deposition equipment supporting the performance of FinFET and subsequent node transistors.